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| Datasheet File OCR Text: |
| PROCESS Schottky Rectifier CP108 Central TM Schottky Barrier Rectifier Chip - 2.0 Amp Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 52 X 52 MILS 9 MILS 47 X 47 MILS Al - 20,000A Au - 10,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 5,110 PRINCIPAL DEVICE TYPES 1N5817 1N5818 1N5819 CXSH-4 CZSH-4 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R8 (9 -September 2003) Central TM PROCESS CP108 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R8 (9 -September 2003) |
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